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  Datasheet File OCR Text:
 BAT42W,BAT43W
SEMICONDUCTOR
SMALL SIGNAL SCHOTTKY DIODES SOD-123
SMALL SIGNAL CHOTTKY DIODES
WWW.JIFUSEMICON.COM
FEATURES
For general purpose applications These diodes features very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. These diodes are also available in the Mini-MELF case with type designation LL42 to LL43 and in the DO-35 case with the type designation BAT42 to BAT43,in the Micro-MELF case with type designation MCL42 to MCL43
JF
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MECHANICAL DATA
Case: SOD-123 plastic case Weight: Approx. 0.01 gram Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols Repetitive Peak Reverse Voltage Forward Continuous Current at TA=25 C Repetitive Peak Forward Current at tp Surge forward current at tp Power Dissipation 1) at TA=65 C Junction temperature
Ambient Operating temperature Range Storage Temperature Range
Value 30 200 500 4
1) 1) 1) 1)
Units V mA mA A mW
C C C
1s, d
0.5,
TA=25 C
10mS , TA=25 C
VRRM IF IFRM IFSM Ptot TJ TA TSTG
200 125
-55 to+125 -55 to+150
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Symbols Reverse breakdown voltage Tested with 100mA Pulses Forward voltage Pulse Test tp at IF=200mA, atIF=10mA, atIF=50mA, at IF=2mA , atIF=15mA, Leakage current pulse test tp 300ms,d 2% Min. 30 1 0.4 0.65 0.33 0.45 0.5 100 7 5 80 300 1) Typ. Max. Unis V V V V V V mA mA pF ns % K/W
V(BR)R VF VF VF VF VF IR IR Ctot trr RqJA
BAT42W BAT42W BAT43W BAT43W
300ms ,d 2% at VR=25V, at VR=50V, TJ=100 C
0.26
Junction Capacitance at VR=25V ,f=1MHz Reverse Recovery time Form IF=10mA,through IR=1mA RL=100W Detection efficiency at RL=15KW CL=300pF,f=45MHz, VR=2V Thermal resistance junction to ambient 1) Valid provided that electrodes are kept at ambient temperature
2-22
JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096


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